Sic Nano for PicoGeo researchers share their work at WOCSDICE - EXMATEC 2023 and the 2023 Spring Meeting & Exhibit!
Sic Nano for PicoGeo researchers, presented their work at two key events dedicated to advanced material research and state-of-the-art technologies. They showcased and shared their remarkable work and achievements with fellow members of the scientific community!
WOCSDICE - EXMATEC 2023
From the 21st to the 25th of May the 6th Workshop on Compound Semiconductor Devices and Integrated Circuits and the 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023) were held in Palermo, Italy.
WOCSDICE, an annual workshop since 1973, brings together scientists, early career researchers, and engineers to discuss state-of-the-art research findings in compound semiconductor materials, devices, and integrated circuits. The event has been held in various locations, including Las Palmas de Gran Canaria, Bucharest, Cabourg, Bristol, and Ponta Delgada. EXMATEC, based on biennial meetings, focuses on material fabrication, characterization, and processing of compound semiconductors. Since 2014, EXMATEC has been organized jointly with WOCSDICE every two years, resulting in a unique annual WOCSDICE-EXMATEC conference. The Steering Committees and local organizers aim to maintain traditional scientific features while promoting intensive interactions between young researchers and experts in the field.
Sic Nano for PicoGeo researchers
SiC Nano for PicoGeo's researcher Francesco La Via, from CNR-IMM, Catania, delivered an impactful presentation on the "Measurement of Residual Stress, Young's Modulus, and Beam Resonator Q Factor on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> Silicon”. The presentation featured contributions from distinguished individuals in the field; the work showcased a highly sensitive strain meter that can be very important for understanding geophysical phenomena and ensuring population safety. Additionally, Viviana Scuderi - CNR-IMM, Catania - presented research on the "Effect of Stress on 3C-SiC Resonator by Raman Spectroscopy". Showing how Raman spectroscopy can be used for stress characterisation, Scuderi demonstrated how stress characterization could be achieved, highlighting its potential in determining the optimal geometrics of microresonators. These presentations provided an excellent opportunity for PicoGeo's researchers to exhibit and share their exceptional progress in developing a seismic strain meter based on 3C-SiC technology.
Materials research community at the 2023 Spring Meeting & Exhibit
The 40th Anniversary of the Spring Meeting & Exhibit, organised by the European Material Research Society, was held in Strasbourg from May 29 to June 2. Among the multiple plenary sessions, PicoGeo’s researchers had the chance to present their research work!
The Spring Meeting & Exhibit is a leading forum for scientists and engineers to exchange information and ideas at the forefront of materials research. The focus of the scientific program is both on fundamental investigations and technological applications, providing an international forum for discussing recent advances related to the different aspects to be considered to promote innovation. The high-quality scientific program addressed different topics organized into 21 symposia arranged in 6 clusters covering the fields of Energy materials; Nanomaterials and advanced characterization; Biomaterials and soft materials; Electronics, magnetics, and photonics; Functional materials; Education and training.
Sic Nano for PicoGeo researchers
Francesco La Via and Viviana Scuderi, in collaboration with other distinguished researchers, showcased other findings on the topic of "Impact of doping on stress evaluation of Si/3C-SiC hetero-epitaxy." The presentation highlighted the significant influence of stress on resonators, emphasizing how the properties of MEMS resonators are closely dependent on the internal stress of the 3C-SiC layer. Furthermore, they demonstrated the potential of this material for producing high-quality strain sensors. Another session featured our researchers and their fellow colleagues, their discussion revolved around "Defect formation in 3C-SiC grown on compliant Si substrates". They presented results related to Inverted Silicon Pyramids (ISP), Truncated and Long Inverted Silicon Pyramids (T ISPL), and Long Inverted Silicon Pyramids (ISPL), focusing on the new innovative design of Inverted Silicon Pyramids that can enhance strain relaxation. Lastly, Francesco La Via and Viviana Scuderi delivered a presentation on the "Effect of stress and different crystal orientations on 3C-SiC resonator." Reporting a comprehensive characterization of Young's Modulus and residual stress of monocrystalline 3C-SiC layers with various doping types grown on <111> and <100> oriented silicon substrates.