Save the date: ICSCRM 2023!
The International Conference on Silicon Carbide and related materials (ICSRM) is back in Sorrento for its 20th edition and SiC Nano for PicoGeo will organise a Tutorial Day!
The International Conference on Silicon Carbide and related materials (ICSRM) is back in Sorrento for its 20th edition! The event will be held from the 17th to the 22nd of September, 2023 in Sorrento, Italy, at the Hilton Sorrento Palace Hotel. The conference programme includes a keynote industrial speech, plenary sessions, and a tutorial day.
The International Conference on Silicon Carbide and Related Materials (ICSCRM) is the most important technical conference series on silicon carbide (SiC) and related materials. Until the 19th edition in 2022, it has been held bi-annually, alternating between the USA, Europe, and Japan. From this year on, the conference will become an annual event under the well-established name ICSCRM with a new rotation schedule integrating the SiC communities worldwide.
Focusing on silicon carbide and other wide bandgap semiconductors, ICSCRM investigates, presents, and debates the most recent developments in the field. At the conference, researchers and engineers from the corporate, academic, and public sectors can exchange views on current scientific and technical concerns on an international platform.
Tutorial Day at ICSCRM
On September 17th, ICSCRM 2023 will host a Tutorial Day for young researchers. The satellite event, dedicated to PhD students and Postdocs, will be organised by SiC Nano for PicoGeo, with Dr. Francesco La Via, IMM-CNR, our project coordinator, as Event Chair.
The Tutorial Day will focus on "New Topics in SiC research”, and it is set to showcase various experts in silicon carbide (SiC) technology and its applications. The program features renowned professionals from different institutions who will share their insights and expertise with young researchers in specific areas related to SiC.
The event will start with a presentation by Prof. Tsunenobu Kimoto from Kyoto University, discussing the fundamentals of SiC Complementary MOSFETs and JFETs for Advanced IC Applications. Philip G. Neudeck from NASA Glenn Research Center will discuss high-temperature devices for aerospace, while Filippo Giannazzo from CNR-IMM will discuss integrating 2D materials on silicon carbide. Prof. Daniel Alquier from the University of Tours will discuss SiC's added value in MEMS devices. At the same time, Prof. Haiyan Ou – coordinator of SiComb project - from the Technical University of Denmark, will highlight the main achievement of its EU project to the group. Prof. Stephen E. Saddow from the University of South Florida will address SiC's potential in biotechnology, highlighting its diverse applications beyond power electronics.
Overall, the Tutorial Day will provide attendees with a comprehensive overview of SiC technology and its diverse applications, ranging from advanced ICs, aerospace devices, 2D material integration, MEMS devices, photonic systems, to biotechnology. It promises to be an informative and enlightening program for anyone interested in the advancements and potential of silicon carbide.